Semiconductor integrated circuit device
US9793215B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Apr 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integratd circuit device includes fuse elements formed on an element isolation insulating film, and an insulating film, an interlayer insulating film and a silicon nitride film successively formed over the fuse elements. An opening region extends through the silicon nitride film into the interlayer insulating film above the fuse elements, and openings formed in the interlayer insulating film are positioned on both sides of middle portions of the fuse elements. The openings facilitate blowing off of the insulating film during laser cutting of the fuse elements, reducing physical damage to the element isolation insulating film under the fuse elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.