Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
US9793252B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an active matrix display is disclosed in which one or more oxide thin film transistors is monolithically integrated with an inorganic light emitting diode structure. The method comprises forming an array of inorganic light emitting diodes over a substrate defining a plurality of sub-pixels, depositing an insulating layer over the inorganic LED array, forming conductive vias through the insulating layer, one via for each LED in the LED array, and forming a metal oxide thin film transistor backplane, including an array of pixel driver circuits, over the dielectric layer and conductive vias, wherein one driver circuit electrically controls each sub-pixel through the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.