Method of manufacturing a semiconductor device
US9793291B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Apr 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.