Capacitor structure
US9793340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a capacitor structure (2) comprising a silicon substrate (4) with first and second sides (6, 8), a double double Metal Insulator Metal trench capacitor (10) including a basis electrode (12), an insulator layer (16, 20), a second and a third conductive layers (18, 22); and comprising a second pad (26) and a fourth pad (30) coupled to the basis electrode (12), a first pad (24) and a third pad (28) coupled together, the first pad (24) being located on the same substrate side than the second pad (26), the third pad (28) being located on the same substrate side than the fourth pad (30), the third pad (28) being coupled to the second conductive layer (18), said second conductive layer (18) being flush with or protruding from the opposite second side (8).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.