Semiconductor thin film structure and method of forming the same
US9793359B2 · kind B2 · utility
2Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2012 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | May 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor thin film structure and a semiconductor thin film structure formed using the same is provided. A sacrificial layer is formed on a substrate and then patterned through various methods, an inorganic thin film is formed on the sacrificial layer and then the sacrificial layer is selectively removed to form a cavity defined by the substrate and the inorganic thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.