Multiple zone power semiconductor device
US9793386B2 · kind B2 · utility
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2References
20Claims
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Inventor
Key dates
| Filing date | Oct 14, 2015 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jan 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/642
Abstract
A power semiconductor device is comprised of a plurality of zones having similar structure. Each of the zones may be characterized by a switching loss during transitions to a non-conducting state. The device is configured such that the switching loss is different between at least two of the zones. Further, the device is configured such that zones having greater switching losses transition to the non-conducting state before zones having lesser switching losses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.