Patent · US Active

Fin field effect transistor (FinFET)

US9793408B2 · kind B2 · utility

1Cited by

3References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Gerben Doornbos · Kessel-Lo, BE
Robert James Pascoe Lander · Leuven, BE

Key dates

Filing date	Mar 25, 2015
Grant date	Oct 17, 2017
Priority date	—
Expiry date	Mar 25, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6213
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A FinFET whose fin has an upper portion doped with a first conductivity type and a lower portion doped with a second conductivity type, and the junction between the upper portion and the lower portion acts as a diode. The FinFET further includes: at least one layer of high-k dielectric material (for example Si3N4) adjacent at least one side of the fin for redistributing a potential drop more evenly over the diode. Examples of the k value for the high-k dielectric material are k≧5, k≧7.5, and k≧20.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.