Manufacturing method and structure of oxide semiconductor TFT substrate
US9793411B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2014 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Sep 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to define a channel and a source terminal of an oxide semiconductor TFT substrate. Since the oxide conductor layer is relatively thin and compared to the known techniques, the width of the channel can be made smaller and the width of the channel can be controlled precisely, the difficult of the manufacturing process of the oxide semiconductor TFT substrate can be reduced and the performance of the oxide semiconductor TFT substrate can be enhanced and the yield rate of manufacture can be increased. In a structure of an oxide semiconductor TFT substrate manufactured with the present invention, since the oxide conductor layer and the oxide semiconductor layer are similar in structural composition, excellent ohmic contact can be formed; the oxide semiconductor layer has better capability of inclining upward and the oxide conductor does not cause metal ion contamination in the oxide semiconductor layer; and the oxide conductor is transparent so as to help increase aperture ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.