Metal oxide thin film transistor having channel protection layer
US9793413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2014 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Dec 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.