Semiconductor device and method of manufacturing the same
US9793415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Apr 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate electrode on the semiconductor layer, a first insulating layer between the semiconductor layer and the gate electrode; a second insulating layer on the gate electrode, source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer, and a doping layer disposed along contact holes of the first and second insulating layers, which expose the both ends of the semiconductor layer, such as, between the both ends of the semiconductor layer and the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.