UV light emitting devices and systems and methods for production
US9793433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Oct 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.