Memristor structures

US9793473B2 · kind B2 · utility

Assignee

• Hewlett Packard Enterprise Development LP · US

Inventors

• Shih-Yuan Wang · Palo Alto, US
• Jianhua Yang · Palo Alto, US
• Minxian Zhang · Mountain View, US
• Alexandre M. Bratkovski · Mountain View, US
• R. Stanley Williams · Portola Valley, US

Key dates

• Filing date: Sep 5, 2013
• Grant date: Oct 17, 2017
• Expiry date: Sep 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.