Structured silicon-based thermal emitter
US9793478B2 · kind B2 · utility
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3References
29Claims
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Key dates
| Filing date | Jul 6, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jul 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01K1/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.