Systems for crystal growth utilizing furnaces, ampoules, and crucibles
US9797061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.