Transparent conductive film
US9798424B2 · kind B2 · utility
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Key dates
| Filing date | Oct 16, 2013 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A transparent conductive film includes a film base, and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a gradient of a concentration of tin oxide in a thickness direction thereof. A maximum value of the concentration of tin oxide in the thickness direction of the polycrystalline layer is 6 wt % to 12 wt %. The polycrystalline layer has a thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer is 380 nm to 730 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.