Methods of forming a semiconductor device by thermally treating a cleaned surface of a semiconductor substrate in a non-oxidizing ambient
US9799523B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Oct 12, 2015 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Oct 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to methods for forming a high-k gate dielectric, the methods comprising the steps of providing a semiconductor substrate, cleaning the substrate, performing a thermal treatment, and performing a high-k dielectric material deposition, wherein said thermal treatment step is performed in a non-oxidizing ambient, leading to the formation of a thin interfacial layer between said semiconductor substrate and said high-k dielectric material and wherein the thickness of said thin interfacial layer is less than 10 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.