Method of selectively removing silicon nitride and etching apparatus thereof
US9799530B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Oct 17, 2013 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Oct 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.