Semiconductor device and method of fabricating the same
US9799606B2 · kind B2 · utility
2Cited by
10References
14Claims
0Family size
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Key dates
| Filing date | Mar 4, 2015 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jul 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first conductive pattern on a substrate, an insulating diffusion barrier layer conformally covering a surface of the first conductive pattern, the insulation diffusion barrier layer exposed by an air gap region adjacent to a sidewall of the first conductive pattern, and a second conductive pattern on the first conductive pattern, the second conductive pattern penetrating the insulating diffusion barrier layer so as to be in contact with the first conductive pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.