Semiconductor devices including field effect transistors
US9799674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Feb 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first device isolation layer defining active regions spaced apart from each other along a first direction on a substrate, second device isolation layers defining a plurality of active patterns protruding from the substrate, the second device isolation layers extending in the first direction to be spaced apart from each other in a second direction and connected to the first device isolation layer, a gate structure extending in the second direction on the first device isolation layer between the active regions, a top surface of the second device isolation layer being lower than a top surface of the active pattern, a top surface of the first device isolation layer being higher than the top surface of the active pattern, and at least part of a bottom surface of the gate structure being higher than the top surface of the active pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.