Semiconductor device, FinFET transistor and fabrication method thereof
US9799676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/367
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides semiconductor devices, fin field-effect transistors and fabrication methods thereof. An exemplary fin field-effect transistor includes a semiconductor substrate; an insulation layer configured for inhibiting a short channel effect and increasing a heat dissipation efficiency of the fin field-effect transistor formed over the semiconductor substrate; at least one fin formed over the insulation layer; a gate structure crossing over at least one fin and covering top and side surfaces of the fin formed over the semiconductor substrate; and a source formed in the fin at one side of the gate structure and a drain formed in the fin at the other side of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.