High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture
US9799784B2 · kind B2 · utility
7Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Jun 17, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.