Process for manufacturing a photonic circuit with active and passive structures

US9799791B2 · kind B2 · utility

Assignee

• Huawei Technologies Co., Ltd. · CN

Inventor

• Tom Collins · Munich, DE

Key dates

• Filing date: Jan 13, 2015
• Grant date: Oct 24, 2017
• Expiry date: Nov 6, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/413
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A process for manufacturing a photonic circuit comprises: manufacturing on a first wafer a first layer stack comprising an underclad oxide layer and a high refractive index waveguide layer; patterning the high refractive index waveguide layer to generate a passive photonic structures; planarizing the first layer stack with a planarizing oxide layer having a thickness below 300 nanometers above the high refractive index waveguide layer; annealing the patterned high refractive index waveguide layer before and/or after the planarizing oxide layer; manufacturing on a second wafer a second layer stack comprising a detachable mono-crystalline silicon waveguide layer; transferring and bonding the first layer stack and the second layer stack; manufacturing active photonic devices in the mono-crystalline silicon waveguide layer; and realizing evanescent coupling between the mono-crystalline silicon waveguide layer and the high refractive index waveguide layer.