Thermal emitter comprising near-zero permittivity materials
US9799798B1 · kind B1 · utility
4Cited by
1References
8Claims
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Key dates
| Filing date | Dec 15, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Dec 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.
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