Hybrid diode device
US9800181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2016 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Oct 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N39/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.