Level shifter applicable to low voltage domain to high voltage domain conversion
US9800246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2015 |
| Grant date | Oct 24, 2017 |
| Priority date | — |
| Expiry date | Sep 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/356182
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A level shifter includes a latch circuit having a first FET and a second FET; an input circuit having a third FET and a fourth FET, the gates of the first and second FETs being coupled to the drains of the fourth and third FETs, respectively; a first resistive device (resistor, diode-connected FET) coupled between and in series with the first and third FETs between a first voltage rail and a second voltage rail; and a second resistive device (resistor, diode-connected FET) coupled between and in series with the second and fourth FETs between the first and second voltage rails. The gates of the third and fourth FETs are configured to receive a first set of complementary voltages, and a second set of complementary voltages are configured to be generated at the gates of the first and second FETs, respectively. The second set of complementary voltages are based on the first set of complementary voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.