Electroless atomic layer deposition
US9803285B1 · kind B1 · utility
2Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Dec 11, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.