Crucible for growing sapphire single crystal, and method for producing crucible for growing sapphire single crystal
US9803291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2013 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Jun 28, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.