Patent · US Active

Crucible for growing sapphire single crystal, and method for producing crucible for growing sapphire single crystal

US9803291B2 · kind B2 · utility

2Cited by
0References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 12, 2013
Grant dateOct 31, 2017
Priority date
Expiry dateJun 28, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1092
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.