Patent · US Active

Embedded noble metal electrodes in microfluidics

US9804122B2 · kind B2 · utility

2Cited by
2References
12Claims
0Family size

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Key dates

Filing dateNov 25, 2015
Grant dateOct 31, 2017
Priority date
Expiry dateJan 24, 2036

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB01L2400/0421
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A technique relates to manufacturing a nanogap. An oxide layer is disposed on top of a substrate. A release layer is disposed in a pattern on top of the oxide layer. A patterned trench is etched into the oxide layer using the pattern of the release layer. A metal layer is disposed on the release layer and in the patterned trench. A polish removes the release layer, thereby removing both the release layer and a portion of the metal layer having been disposed on top of the release layer, such that the metal layer remaining includes a first metal part and a second metal part connected by a metal nanowire. The metal layer remaining is coplanar with the oxide layer. A nanochannel is formed in the oxide layer in a region of the metal nanowire. The nanogap is formed in the metal nanowire separating the first and second metal parts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.