Semiconductor device structure and manufacturing method
US9806046B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Sep 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/81203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.