Metal oxide semiconductor thin film, thin film transistor, and their fabricating methods, and display apparatus
US9806097B2 · kind B2 · utility
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Key dates
| Filing date | Dec 10, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.