Thin film transistor substrate, display device including a thin film transistor substrate, and method of forming a thin film transistor substrate
US9806105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Oct 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.