Thin film transistor, array substrate and display device having the same, and method of manufacturing thereof
US9806199B2 · kind B2 · utility
0Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | Dec 10, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.