Semiconductor device
US9806201B2 · kind B2 · utility
15Cited by
44References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Mar 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.