Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain
US9806217B2 · kind B2 · utility
1Cited by
3References
11Claims
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Key dates
| Filing date | Apr 30, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Apr 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.