Nitride semiconductor element and method for manufacturing the same
US9806232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
Abstract
A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.