Vertical-cavity surface-emitting laser diode and optical transmission apparatus
US9806498B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | May 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18394
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.