Bootstrap class-D wideband RF power amplifier
US9806678B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2015 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-power, high-frequency radio frequency power amplifier includes an output stage and a single-phase driver. The output stage is arranged in a Class-D amplifier configuration and includes a first depletion mode field effect transistor (FET), a second depletion mode FET, and a bootstrap path that couples the output of the output stage to the gate of the second FET. The first and second depletion mode FETs are switched out-of-phase and between fully-ON and fully-OFF states, under the direction of the single-phase driver. The single-phase driver directly controls the ON/OFF state of the first depletion mode FET and provides a discharge path through which the input gate capacitor of the second depletion mode FET in the output stage can discharge to turn OFF the second depletion mode FET. The bootstrap path provides a current path through which the input gate capacitor of the second depletion mode FET can charge to turn the second depletion mode FET ON.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.