Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure
US9806710B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.