Density-optimized module-level inductor ground structure
US9807882B1 · kind B1 · utility
13Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2016 |
| Grant date | Oct 31, 2017 |
| Priority date | — |
| Expiry date | Aug 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) device may include a first substrate having an inductor ground plane in a conductive layer of the first substrate. The integrated circuit may also include a first inductor in a passive device layer of a second substrate that is supported by the first substrate. A shape of the inductor ground plane may substantially correspond to a silhouette of the first inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.