Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process

US9809711B2 · kind B2 · utility

Assignee

• Versum Materials US, LLC · US

Inventors

• Manchao Xiao · San Diego, US
• Ronald Martin Pearlstein · San Marcos, US
• Richard Ho · Anaheim, US
• Xinjian Lei · Vista, US
• Steven Gerard Mayorga · Oceanside, US
• Daniel P. Spence · Carlsbad, US

Key dates

• Filing date: Jan 10, 2013
• Grant date: Nov 7, 2017
• Expiry date: Mar 5, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR1)nR24-n and a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR1)nR23-n; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R23-p(R1O)pSi—R3—Si(OR1)pR23-p and a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (R1O)mR22-m(X)Si—R3—Si(OR4)2R5 wherein at least one or all of the R1 and R2 substituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.