Temperature sensor with layered architecture
US9810584B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
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Key dates
| Filing date | Feb 10, 2014 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Oct 10, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A temperature sensor includes two branches, each branch having at least a first transistor and a second transistor connected as diodes and cascaded, so that an emitter of the first transistor is connected to a collector of the second transistor of the same branch. The temperature source also includes a current source configured to provide a current to the two branches, and an analog-to-digital convertor. The analog-to-digital convertor is connected to capture a voltage between emitters of the first transistors or of the second transistors, and is configured to convert said voltage to a digital temperature signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.