Formulations for producing indium oxide-containing layers, process for producing them and their use

US9812330B2 · kind B2 · utility

Assignee

• EVONIK DEGUSSA GMBH · DE

Inventors

• Juergen Steiger · Taipei, TW
• Alexey Merkulov · Ludwigshafen, DE
• Arne Hoppe · Herne, DE

Key dates

• Filing date: Apr 28, 2014
• Grant date: Nov 7, 2017
• Expiry date: Apr 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02664
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.