Semiconductor device and method for manufacturing the same
US9812529B2 · kind B2 · utility
1Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Feb 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of an embodiment includes a SiC layer, a gate electrode, a gate insulating layer provided between the SiC layer and the gate electrode, and a first region provided between the SiC layer and the gate insulating layer and having a peak of nitrogen (N) concentration distribution and a peak of fluorine (F) concentration distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.