Semiconductor device and method of manufacturing the same
US9812534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2015 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Feb 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path. A method of manufacturing such a semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.