Spin valve magnetoresistance element with improved response to magnetic fields
US9812637B2 · kind B2 · utility
32Cited by
56References
40Claims
0Family size
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Key dates
| Filing date | May 26, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | May 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3268
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.