Method for single crystal growth of photovoltaic perovskite material and devices
US9812660B2 · kind B2 · utility
4Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Jan 28, 2016 |
| Grant date | Nov 7, 2017 |
| Priority date | — |
| Expiry date | Jan 28, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.