Edge-emitting semiconductor laser and method for the production thereof

US9812844B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Alvaro Gomez-Iglesias · Regensburg, DE
• Harald König · Bernhardswald, DE
• Christian Lauer · Regensburg, DE

Key dates

• Filing date: Jun 17, 2014
• Grant date: Nov 7, 2017
• Expiry date: Jul 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/18
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second subregion.