Semiconductor sensing structure and manufacturing method thereof
US9815685B2 · kind B2 · utility
5Cited by
0References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 15, 2015 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R31/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.