Preparation method for multi-layer metal oxide porous film nano gas-sensitive material
US9816176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2014 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | May 12, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y15/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention discloses a method for preparing a multilayer metal oxide nano-porous thin film gas sensitive material, in which the microsphere aqueous solution is self-assembled on a substrate covered with an insulating layer, to form a compact single-layer array template; the surface of these microspheres are etched by using a plasma etching method to reduce the pitches between the microspheres; the metal oxide thin film is deposited by a physical deposition method; the template is removed by ultrasonic treatment with a solvent to prepare a porous array metal oxide thin film; and annealing is performed in air atmosphere to obtain the metal oxide porous thin film gas sensitive material. The present invention can be used for preparing a regular porous array thin film gas sensitive material; the pore size of the prepared porous thin film material is uniform and controllable; and the combination of these materials is controllable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.