Thin film capacitor
US9818548B2 · kind B2 · utility
2Cited by
0References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 26, 2016 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Mar 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1236
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.